This will push the electron of the n-channel and attract the holes of the p-type substrate and then both will recombine. If we apply a negative voltage to the gate terminal then an electron will get accumulated on the metallic surface of the gate terminal. This is also known as a drain to source saturation current (I DSS). But, after a certain value of voltage, if we increase the voltage even further, the current will still remain constant. If we further increase the voltage across the drain and source current will also increase. But, the conventional drain current will flow from drain to source. So, electrons will be attracted towards the drain terminal and a flow of electrons will establish from source to drain. So, the drain side is more positive than the source. Working of depletion type MOSFETĪ voltage supply is connected across an N-channel MOSFET’s drain and the source and gate to the source terminal are shorted as shown. Due to the isolated gate, its input impedance is very large and there will not flow any current trough it. This construction is reversed in P-channel MOSFET as shown. Gate terminal is also connected to metallic contact but this metallic contact is isolated from the channel using metal oxide. Source and drain are connected to the channel through metallic contact. An N-channel MOSFET, the channel is made up of an n-type semiconductor which is fabricated on a p-type substrate. Figure on the left side is the N-channel MOSFET and on the right side is P-channel. There are two types of MOSFET on the basis of its channel- N-channel and P-channel. Output characteristics of enhancement type MOSFET.Output characteristics of depletion type MOSFET.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |